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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › MS2361
MS2361

MS2361 - Microsemi Corporation

Part Number
MS2361
Manufacturer
Microsemi Corporation
Brief Description
TRANS RF BIPO 87.5W 2.6A M115
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
MS2361 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
4490 pcs
Reference Price
USD 0/pcs
Our Price
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MS2361 Detailed Description

Part Number MS2361
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f) -
Gain 9dB
Power - Max 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce -
Current - Collector (Ic) (Max) 2.6A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case M115
Supplier Device Package M115
Weight -
Country of Origin -

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