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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › MS1001
MS1001

MS1001 - Microsemi Corporation

Part Number
MS1001
Manufacturer
Microsemi Corporation
Brief Description
TRANS RF BIPO 270W 20A M174
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
MS1001 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
293 pcs
Reference Price
USD 91.0166/pcs
Our Price
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MS1001 Detailed Description

Part Number MS1001
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 18V
Frequency - Transition 30MHz
Noise Figure (dB Typ @ f) -
Gain 13dB
Power - Max 270W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 5V
Current - Collector (Ic) (Max) 20A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case M174
Supplier Device Package M174
Weight -
Country of Origin -

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