JANS1N3595US - Microsemi Corporation

Part Number	JANS1N3595US
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	-
Current - Average Rectified (Io)	200mA (DC)
Voltage - Forward (Vf) (Max) @ If	1V @ 200mA
Speed	Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)	3µs
Current - Reverse Leakage @ Vr	1nA @ 125V
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Package / Case	SQ-MELF, B
Supplier Device Package	B, SQ-MELF
Operating Temperature - Junction	-65°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
JANS1N3595-1	Microsemi Corporation	DIODE GEN PURP 125V 200MA DO35	Details
JANS1N3595US	Microsemi Corporation	DIODE GEN PURP 200MA DO35	Details
JANS1N4099-1	Microsemi Corporation	DIODE ZENER 6.8V 500MW DO35	Details
JANS1N4100-1	Microsemi Corporation	DIODE ZENER 7.5V 500MW DO35	Details
JANS1N4105UR-1	Microsemi Corporation	DIODE ZENER 11V 500MW DO213AA	Details
JANS1N4109UR-1	Microsemi Corporation	DIODE ZENER 15V 500MW DO213AA	Details
JANS1N4118UR-1	Microsemi Corporation	DIODE ZENER 27V 500MW DO213AA	Details
JANS1N4120-1	Microsemi Corporation	DIODE ZENER 30V 500MW DO35	Details
JANS1N4125UR-1	Microsemi Corporation	DIODE ZENER 47V 500MW DO213AA	Details
JANS1N4461	Microsemi Corporation	DIODE ZENER 6.8V 1.5W DO204AL	Details