APTM60H23FT1G

APTM60H23FT1G - Microsemi Corporation

Part Number
APTM60H23FT1G
Manufacturer
Microsemi Corporation
Brief Description
MOSFET 4N-CH 600V 20A SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
APTM60H23FT1G PDF online browsing
Datasheet PDF Download
APTM60H23FT1G.pdf
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
705 pcs
Reference Price
USD 36.7506/pcs
Our Price
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APTM60H23FT1G Detailed Description

Part Number APTM60H23FT1G
Part Status Active
FET Type 4 N-Channel (H-Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 276 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5316pF @ 25V
Power - Max 208W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP1
Supplier Device Package SP1
Weight -
Country of Origin -

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