| Part Number | APTM10DHM05G |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 278A |
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 125A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 700nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 25V |
| Power - Max | 780W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP6 |
| Supplier Device Package | SP6 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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APTM100A13DG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Details |
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APTM100A13SCG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Details |
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APTM100A13SG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Details |
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APTM100A18FTG | Microsemi Corporation | MOSFET 2N-CH 1000V 43A SP4 | Details |
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APTM100A23SCTG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | Details |
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APTM100A23STG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | Details |
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APTM100A40FT1G | Microsemi Corporation | MOSFET 2N-CH 1000V 21A SP1 | Details |
