APT33GF120BRG - Microsemi Corporation

Part Number	APT33GF120BRG
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	52A
Current - Collector Pulsed (Icm)	104A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 25A
Power - Max	297W
Switching Energy	2.8mJ (on), 2.8mJ (off)
Input Type	Standard
Gate Charge	170nC
Td (on/off) @ 25°C	25ns/210ns
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT33GF120B2RDQ2G	Microsemi Corporation	IGBT 1200V 64A 357W TMAX	Details
APT33GF120BRG	Microsemi Corporation	IGBT 1200V 52A 297W TO247	Details
APT33GF120LRDQ2G	Microsemi Corporation	IGBT 1200V 64A 357W TO264	Details
APT33N90JCCU2	Microsemi Corporation	MOSFET N-CH 900V 33A SOT227	Details
APT33N90JCCU3	Microsemi Corporation	MOSFET N-CH 900V 33A SOT227	Details
APT33N90JCU2	Microsemi Corporation	MOSFET N-CH 900V 33A SOT227	Details
APT33N90JCU3	Microsemi Corporation	MOSFET N-CH 900V 33A SOT227	Details