VWM200-01P

VWM200-01P - IXYS

Part Number
VWM200-01P
Manufacturer
IXYS
Brief Description
MOSFET 6N-CH 100V 210A V2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
VWM200-01P PDF online browsing
Datasheet PDF Download
VWM200-01P.pdf
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
4093 pcs
Reference Price
USD 0/pcs
Our Price
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VWM200-01P Detailed Description

Part Number VWM200-01P
Part Status Obsolete
FET Type 6 N-Channel (3-Phase Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 210A
Rds On (Max) @ Id, Vgs 5.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case V2-PAK
Supplier Device Package V2-PAK
Weight -
Country of Origin -

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