IXTX6N200P3HV

IXTX6N200P3HV - IXYS

Part Number
IXTX6N200P3HV
Manufacturer
IXYS
Brief Description
2000V TO 3000V POLAR3 POWER MOSF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXTX6N200P3HV PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
80 pcs
Reference Price
USD 58.4/pcs
Our Price
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IXTX6N200P3HV Detailed Description

Part Number IXTX6N200P3HV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 960W (Tc)
Rds On (Max) @ Id, Vgs 4 Ohm @ 3A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247HV
Package / Case TO-247-3 Variant
Weight -
Country of Origin -

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