IXTN17N120L - IXYS

Part Number	IXTN17N120L
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	15A
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	155nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	8300pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	540W (Tc)
Rds On (Max) @ Id, Vgs	900 mOhm @ 8.5A, 20V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTN102N65X2	IXYS	MOSFET N-CH 650V 76A X2 SOT-227	Details
IXTN110N20L2	IXYS	MOSFET N-CH 200V 100A SOT-227	Details
IXTN120N25	IXYS	MOSFET N-CH 250V 120A SOT-227	Details
IXTN120P20T	IXYS	MOSFET P-CH 200V 106A SOT-227	Details
IXTN170P10P	IXYS	MOSFET P-CH 100V 170A SOT227	Details
IXTN17N120L	IXYS	MOSFET N-CH 1200V 15A SOT-227B	Details
IXTN200N10L2	IXYS	MOSFET N-CH 100V 178A SOT-227	Details
IXTN200N10T	IXYS	MOSFET N-CH 100V 200A SOT-227	Details
IXTN210P10T	IXYS	MOSFET P-CH 100V 210A SOT-227	Details
IXTN21N100	IXYS	MOSFET N-CH 1KV 21A SOT-227B	Details