IXTA2N100P - IXYS

Part Number	IXTA2N100P
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	24.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	655pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	86W (Tc)
Rds On (Max) @ Id, Vgs	7.5 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (IXTA)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTA02N250	IXYS	MOSFET N-CH 2500V 0.2A TO263	Details
IXTA02N250HV	IXYS	MOSFET N-CH 2500V 0.2A TO263	Details
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IXTA05N100	IXYS	MOSFET N-CH 1000V 0.75A TO-263	Details
IXTA05N100HV	IXYS	MOSFET N-CH 1KV 750MA TO263	Details
IXTA06N120P	IXYS	MOSFET N-CH 1200V 0.6A TO-263	Details
IXTA08N100D2	IXYS	MOSFET N-CH 1000V 800MA D2PAK	Details
IXTA08N100D2HV	IXYS	MOSFET N-CH	Details
IXTA08N100P	IXYS	MOSFET N-CH 1000V 0.8A TO-263	Details
IXTA08N120P	IXYS	MOSFET N-CH 1200V 0.8A TO-263	Details