IXTA1N170DHV

IXTA1N170DHV - IXYS

Part Number
IXTA1N170DHV
Manufacturer
IXYS
Brief Description
MOSFET N-CH 1700V 1A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXTA1N170DHV PDF online browsing
Datasheet PDF Download
IXTA1N170DHV.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
2754 pcs
Reference Price
USD 9.2906/pcs
Our Price
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IXTA1N170DHV Detailed Description

Part Number IXTA1N170DHV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 47nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V
Vgs (Max) ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 290W (Tc)
Rds On (Max) @ Id, Vgs 16 Ohm @ 500mA, 0V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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