IXFK20N120P - IXYS

Part Number	IXFK20N120P
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	193nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	11100pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	780W (Tc)
Rds On (Max) @ Id, Vgs	570 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264AA (IXFK)
Package / Case	TO-264-3, TO-264AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFK100N10	IXYS	MOSFET N-CH 100V 100A TO-264AA	Details
IXFK100N25	IXYS	MOSFET N-CH 250V 100A TO-264AA	Details
IXFK100N65X2	IXYS	MOSFET N-CH 650V 100A TO-264	Details
IXFK102N30P	IXYS	MOSFET N-CH 300V 102A TO-264	Details
IXFK110N07	IXYS	MOSFET N-CH 70V 110A TO-264AA	Details
IXFK120N20	IXYS	MOSFET N-CH 200V 120A TO-264AA	Details
IXFK120N20P	IXYS	MOSFET N-CH 200V 120A TO-264	Details
IXFK120N25	IXYS	MOSFET N-CH 250V 120A TO-264	Details
IXFK120N25P	IXYS	MOSFET N-CH 250V 120A TO-264	Details
IXFK120N30P3	IXYS	MOSFET N-CH 300V 120A TO-264	Details