SPU01N60C3

SPU01N60C3 - Infineon Technologies

Part Number
SPU01N60C3
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V 0.8A TO-251
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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SPU01N60C3 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
960 pcs
Reference Price
USD 1.04/pcs
Our Price
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SPU01N60C3 Detailed Description

Part Number SPU01N60C3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 11W (Tc)
Rds On (Max) @ Id, Vgs 6 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight -
Country of Origin -

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