| Part Number | SPD02N80C3BTMA1 |
|---|---|
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7 Ohm @ 1.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SPD02N50C3 | Infineon Technologies | MOSFET N-CH 560V 1.8A DPAK | Details |
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SPD02N50C3BTMA1 | Infineon Technologies | LOW POWER_LEGACY | Details |
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SPD02N60C3 | infineon | SPD02N60C3 infineon TO-252 New Original Stocks | Details |
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SPD02N60C3BTMA1 | Infineon Technologies | MOSFET N-CH 650V 1.8A DPAK | Details |
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SPD02N60S5 | infineon | SPD02N60S5 infineon TO-252 New Original Stocks | Details |
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SPD02N60S5BTMA1 | Infineon Technologies | MOSFET N-CH 600V 1.8A TO-252 | Details |
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SPD02N80C3 | INF | SPD02N80C3 INF TO-252 New Original Stocks | Details |
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SPD02N80C3ATMA1 | Infineon Technologies | MOSFET N-CH 800V 2A 3TO252 | Details |
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SPD02N80C3BTMA1 | Infineon Technologies | MOSFET N-CH 800V 2A TO-252 | Details |
