IRLR014NTRL - Infineon Technologies

Part Number	IRLR014NTRL
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 25V
Vgs (Max)	±16V
FET Feature	-
Power Dissipation (Max)	28W (Tc)
Rds On (Max) @ Id, Vgs	140 mOhm @ 6A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IRLR014	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK	Details
IRLR014N	IR	IRLR014N IR TO-252 New Original Stocks	Details
IRLR014NPBF	Infineon Technologies	MOSFET N-CH 55V 10A DPAK	Details
IRLR014NTR	Infineon Technologies	MOSFET N-CH 55V 10A DPAK	Details
IRLR014NTRL	Infineon Technologies	MOSFET N-CH 55V 10A DPAK	Details
IRLR014NTRPBF	Infineon Technologies	MOSFET N-CH 55V 10A DPAK	Details
IRLR014NTRR	Infineon Technologies	MOSFET N-CH 55V 10A DPAK	Details
IRLR014PBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK	Details
IRLR014TR	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK	Details
IRLR014TRL	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK	Details