IRFR220NTRLPBF - Infineon Technologies

Part Number	IRFR220NTRLPBF
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	43W (Tc)
Rds On (Max) @ Id, Vgs	600 mOhm @ 2.9A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IRFR210	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK	Details
IRFR210BTF	IR	IRFR210BTF IR TO252 New Original Stocks	Details
IRFR210BTM	IR	IRFR210BTM IR SOT-25.. New Original Stocks	Details
IRFR210BTM_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 200V 2.7A DPAK	Details
IRFR210PBF	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK	Details
IRFR210TR	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK	Details
IRFR210TRL	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK	Details
IRFR210TRLPBF	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK	Details
IRFR210TRPBF	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK	Details
IRFR210TRR	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK	Details