IRFP048NPBF - Infineon Technologies

Part Number	IRFP048NPBF
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	89nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Rds On (Max) @ Id, Vgs	16 mOhm @ 37A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IRFP044	IR	IRFP044 IR TO-247 New Original Stocks	Details
IRFP044N	Infineon Technologies	MOSFET N-CH 55V 53A TO-247AC	Details
IRFP044NPBF	Infineon Technologies	MOSFET N-CH 55V 53A TO-247AC	Details
IRFP044PBF	Vishay Siliconix	MOSFET N-CH 60V 57A TO-247AC	Details
IRFP048	IR	IRFP048 IR TO-247 New Original Stocks	Details
IRFP048N	Infineon Technologies	MOSFET N-CH 55V 64A TO-247AC	Details
IRFP048NPBF	Infineon Technologies	MOSFET N-CH 55V 64A TO-247AC	Details
IRFP048PBF	Vishay Siliconix	MOSFET N-CH 60V 70A TO-247AC	Details
IRFP048R	VISHAY	Power MOSFET	Details
IRFP048RPBF	Vishay Siliconix	MOSFET N-CH 60V 70A TO-247AC	Details