IRF1010EL - Infineon Technologies

Part Number	IRF1010EL
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3210pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Rds On (Max) @ Id, Vgs	12 mOhm @ 50A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Weight	-
Country of Origin	-

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