IPS050N03LGAKMA1 - Infineon Technologies

Part Number	IPS050N03LGAKMA1
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3200pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Rds On (Max) @ Id, Vgs	5 mOhm @ 30A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Stub Leads, IPak
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPS050N03LG	INFINEON	IPS050N03LG INFINEON TO-251.. New Original Stocks	Details
IPS050N03LGAKMA1	Infineon Technologies	MOSFET N-CH 30V 50A TO251-3	Details
IPS050N03LGBKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 50A TO251-3	Details