| Part Number | IPL60R199CPAUMA1 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 199 mOhm @ 9.9A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-VSON-4 |
| Package / Case | 4-PowerTSFN |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IPL60R060CFD7AUMA1 | Infineon Technologies | HIGH POWERNEW | Details |
|
IPL60R065C7AUMA1 | Infineon Technologies | MOSFET HIGH POWER_NEW | Details |
 |
IPL60R065P7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | Details |
|
IPL60R075CFD7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | Details |
|
IPL60R085P7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | Details |
|
IPL60R095CFD7AUMA1 | Infineon Technologies | HIGH POWERNEW | Details |
|
IPL60R104C7AUMA1 | Infineon Technologies | MOSFET N-CH 600V 20A 4VSON | Details |
|
IPL60R105P7AUMA1 | Infineon Technologies | MOSFET N-CH 4VSON | Details |
|
IPL60R115CFD7AUMA1 | Infineon Technologies | HIGH POWERNEW | Details |
|
IPL60R125C7AUMA1 | Infineon Technologies | MOSFET N-CH 600V 17A 4VSON | Details |
