IPL60R075CFD7AUMA1 - Infineon Technologies

Part Number	IPL60R075CFD7AUMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	75 mOhm @ 15.1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs	67nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2721pF @ 400V
FET Feature	-
Power Dissipation (Max)	189W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-VSON-4
Package / Case	4-PowerTSFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPL60R060CFD7AUMA1	Infineon Technologies	HIGH POWERNEW	Details
IPL60R065C7AUMA1	Infineon Technologies	MOSFET HIGH POWER_NEW	Details
IPL60R065P7AUMA1	Infineon Technologies	MOSFET N-CH 4VSON	Details
IPL60R075CFD7AUMA1	Infineon Technologies	MOSFET N-CH 4VSON	Details
IPL60R085P7AUMA1	Infineon Technologies	MOSFET N-CH 4VSON	Details
IPL60R095CFD7AUMA1	Infineon Technologies	HIGH POWERNEW	Details
IPL60R104C7AUMA1	Infineon Technologies	MOSFET N-CH 600V 20A 4VSON	Details
IPL60R105P7AUMA1	Infineon Technologies	MOSFET N-CH 4VSON	Details
IPL60R115CFD7AUMA1	Infineon Technologies	HIGH POWERNEW	Details
IPL60R125C7AUMA1	Infineon Technologies	MOSFET N-CH 600V 17A 4VSON	Details