| Part Number | IPI100N08N3GHKSA1 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 46A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPI100N04S303AKSA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO262-3 | Details |
|
IPI100N04S4H2AKSA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO262-3-1 | Details |
|
IPI100N06S3-03 | Infineon Technologies | MOSFET N-CH 55V 100A I2PAK | Details |
|
IPI100N06S3-04 | Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | Details |
|
IPI100N06S3L-03 | Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | Details |
|
IPI100N06S3L04XK | Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | Details |
|
IPI100N08N3GHKSA1 | Infineon Technologies | MOSFET N-CH 80V 70A TO262-3 | Details |
|
IPI100N08S207AKSA1 | Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | Details |
|
IPI100N10S305AKSA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | Details |
 |
IPI100N12S305AKSA1 | Infineon Technologies | MOSFET N-CHANNEL_100+ | Details |
