IPDD60R150G7XTMA1

IPDD60R150G7XTMA1 - Infineon Technologies

Part Number
IPDD60R150G7XTMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET NCH 650V 45A PG-HDSOP-10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPDD60R150G7XTMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
86577 pcs
Reference Price
USD 1.90175/pcs
Our Price
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IPDD60R150G7XTMA1 Detailed Description

Part Number IPDD60R150G7XTMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 902pF @ 400V
FET Feature -
Power Dissipation (Max) 95W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-10-1
Package / Case 10-PowerSOP Module
Weight -
Country of Origin -

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