IPB065N15N3GE8187ATMA1

IPB065N15N3GE8187ATMA1 - Infineon Technologies

Part Number
IPB065N15N3GE8187ATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 150V 130A TO263-7
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPB065N15N3GE8187ATMA1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4428 pcs
Reference Price
USD 0/pcs
Our Price
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IPB065N15N3GE8187ATMA1 Detailed Description

Part Number IPB065N15N3GE8187ATMA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 8V, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 75V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 100A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Weight -
Country of Origin -

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