IPA60R099C7XKSA1 - Infineon Technologies

Part Number	IPA60R099C7XKSA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1819pF @ 400V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Rds On (Max) @ Id, Vgs	99 mOhm @ 9.7A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPA60R060C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 16A TO-220FP	Details
IPA60R060P7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details
IPA60R080P7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details
IPA60R099C6	Infineon Technologies	MOSFET N-CH 600V 37.9A TO220-FP	Details
IPA60R099C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 37.9A TO220-FP	Details
IPA60R099C7XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3	Details
IPA60R099P6XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220FP-3	Details
IPA60R099P7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details
IPA60R120C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 11A TO220FP-3	Details
IPA60R120P7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details