| Part Number | BSZ0904NSIATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1463pF @ 15V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 2.1W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8-FL |
| Package / Case | 8-PowerTDFN |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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BSZ0901NS | Infineon Technologies | MOSFET N-CH 30V S308 | Details |
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BSZ0901NSATMA1 | Infineon Technologies | MOSFET N-CH 30V S308 | Details |
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BSZ0901NSI | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | Details |
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BSZ0901NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | Details |
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BSZ0902NS | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 | Details |
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BSZ0902NSATMA1 | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 | Details |
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BSZ0902NSI | Infineon Technologies | MOSFET N-CH 30V 21A TSDSON-8 | Details |
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BSZ0902NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 21A TSDSON-8 | Details |
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BSZ0904NSI | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | Details |
|
BSZ0904NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | Details |
