BSS806NL6327HTSA1 - Infineon Technologies

Part Number	BSS806NL6327HTSA1
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 2.5V
Vgs(th) (Max) @ Id	750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs	1.7nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds	529pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	57 mOhm @ 2.3A, 2.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT23-3
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BSS806N	Infineon	BSS806N Infineon SOT-23 New Original Stocks	Details
BSS806NEH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 2.3A SOT23	Details
BSS806NH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 2.3A SOT23	Details
BSS806NL6327HTSA1	Infineon Technologies	MOSFET N-CH 20V 2.3A SOT23	Details