BSM50GD170DLBOSA1

BSM50GD170DLBOSA1 - Infineon Technologies

Part Number
BSM50GD170DLBOSA1
Manufacturer
Infineon Technologies
Brief Description
IGBT 2 LOW POWER ECONO3-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSM50GD170DLBOSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
945 pcs
Reference Price
USD 173.965/pcs
Our Price
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BSM50GD170DLBOSA1 Detailed Description

Part Number BSM50GD170DLBOSA1
Part Status Not For New Designs
IGBT Type -
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 100A
Power - Max 480W
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 50A
Current - Collector Cutoff (Max) 100µA
Input Capacitance (Cies) @ Vce 3.5nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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