BSC159N10LSFGATMA1

BSC159N10LSFGATMA1 - Infineon Technologies

Part Number
BSC159N10LSFGATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 100V 63A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSC159N10LSFGATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
27365 pcs
Reference Price
USD 0.9627/pcs
Our Price
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BSC159N10LSFGATMA1 Detailed Description

Part Number BSC159N10LSFGATMA1
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Rds On (Max) @ Id, Vgs 15.9 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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