BSC0503NSIATMA1 - Infineon Technologies

Part Number	BSC0503NSIATMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 88A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs	3 mOhm @ 30A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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BSC0503NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 22A TDSON-8	Details
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