BSC026N08NS5ATMA1

BSC026N08NS5ATMA1 - Infineon Technologies

Part Number
BSC026N08NS5ATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 80V 23A 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSC026N08NS5ATMA1 PDF online browsing
Datasheet PDF Download
BSC026N08NS5ATMA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
18567 pcs
Reference Price
USD 1.4174/pcs
Our Price
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BSC026N08NS5ATMA1 Detailed Description

Part Number BSC026N08NS5ATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.8V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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