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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › BFR843EL3E6327XTSA1
BFR843EL3E6327XTSA1

BFR843EL3E6327XTSA1 - Infineon Technologies

Part Number
BFR843EL3E6327XTSA1
Manufacturer
Infineon Technologies
Brief Description
TRANSISTOR NPN TSLP-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BFR843EL3E6327XTSA1 PDF online browsing
Datasheet PDF Download
BFR843EL3E6327XTSA1.pdf
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
142202 pcs
Reference Price
USD 0.1882/pcs
Our Price
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BFR843EL3E6327XTSA1 Detailed Description

Part Number BFR843EL3E6327XTSA1
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 2.6V
Frequency - Transition -
Noise Figure (dB Typ @ f) -
Gain 25.5dB
Power - Max 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce -
Current - Collector (Ic) (Max) 55mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-XFDFN
Supplier Device Package TSLP-3-10
Weight -
Country of Origin -

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BFR843EL3E6327XTSA1 BFR843EL3E6327XTSA1 Infineon Technologies TRANSISTOR NPN TSLP-3 Details