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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › BFR840L3RHESDE6327XTSA1
BFR840L3RHESDE6327XTSA1

BFR840L3RHESDE6327XTSA1 - Infineon Technologies

Part Number
BFR840L3RHESDE6327XTSA1
Manufacturer
Infineon Technologies
Brief Description
TRANS RF BIPO NPN 35MA TSLP-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BFR840L3RHESDE6327XTSA1 PDF online browsing
Datasheet PDF Download
BFR840L3RHESDE6327XTSA1.pdf
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
134856 pcs
Reference Price
USD 0.1882/pcs
Our Price
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BFR840L3RHESDE6327XTSA1 Detailed Description

Part Number BFR840L3RHESDE6327XTSA1
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 2.6V
Frequency - Transition 75GHz
Noise Figure (dB Typ @ f) 0.5dB @ 450MHz
Gain 27dB
Power - Max 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max) 35mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package TSLP-3-9
Weight -
Country of Origin -

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BFR840L3RHESDE6327XTSA1 BFR840L3RHESDE6327XTSA1 Infineon Technologies TRANS RF BIPO NPN 35MA TSLP-3 Details