BCR166WH6327XTSA1 - Infineon Technologies

Part Number	BCR166WH6327XTSA1
Part Status	Last Time Buy
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	160MHz
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	PG-SOT323-3
Weight	-
Country of Origin	-

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BCR166WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3	Details