BBY5802VH6327XTSA1 - Infineon Technologies

Part Number	BBY5802VH6327XTSA1
Part Status	Active
Capacitance @ Vr, F	5.5pF @ 6V, 1MHz
Capacitance Ratio	3.5
Capacitance Ratio Condition	C1/C4
Voltage - Peak Reverse (Max)	10V
Diode Type	Single
Q @ Vr, F	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-79, SOD-523
Supplier Device Package	PG-SC79-2
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BBY5802VH6327XTSA1	Infineon Technologies	DIODE TUNING 10V 20MA SC79	Details
BBY5802WE6127XT	Infineon Technologies	DIODE TUNING 10V 20MA SCD-80	Details
BBY5802WH6327XTSA1	Infineon Technologies	DIODE TUNING 10V 20MA SCD80	Details
BBY5803WE6327HTSA1	Infineon Technologies	DIODE TUNING 10V 20MA SOD-323	Details
BBY5805WE6327BTSA1	Infineon Technologies	DIODE TUNING HIGH Q CC SOT-323	Details
BBY5805WH6327XTSA1	Infineon Technologies	DIODE TUNING 10V 20MA SOT323	Details
BBY5806WE6327BTSA1	Infineon Technologies	DIODE TUNING HIGH Q CA SOT-323	Details
BBY5806WH6327XTSA1	Infineon Technologies	DIODE TUNING 10V 20MA SOT323	Details