BAS116E6327HTSA1 - Infineon Technologies

Part Number	BAS116E6327HTSA1
Part Status	Last Time Buy
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	80V
Current - Average Rectified (Io)	250mA (DC)
Voltage - Forward (Vf) (Max) @ If	1.25V @ 150mA
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.5µs
Current - Reverse Leakage @ Vr	5nA @ 75V
Capacitance @ Vr, F	2pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	PG-SOT23-3
Operating Temperature - Junction	150°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BAS116	Diodes Incorporated	DIODE GEN PURP 85V 215MA SOT23-3	Details
BAS116 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 200MA SOT23	Details
BAS116,215	Nexperia USA Inc.	DIODE GEN PURP 75V 215MA SOT23	Details
BAS116,235	Nexperia USA Inc.	DIODE GEN PURP 75V 215MA SOT23	Details
BAS116-7	DIODES	BAS116-7 DIODES SOT-23 New Original Stocks	Details
BAS116-7-99-F	DIODES	BAS116-7-99-F DIODES SOT23 New Original Stocks	Details
BAS116-7-F	Diodes Incorporated	DIODE GEN PURP 85V 215MA SOT23-3	Details
BAS116E6327	ORIGINAL	BAS116E6327 ORIGINAL SOT-23 New Original Stocks	Details
BAS116E6327HTSA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3	Details
BAS116E6433HTMA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3	Details