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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › GP1M009A090N
GP1M009A090N

GP1M009A090N - Global Power Technologies Group

Part Number
GP1M009A090N
Manufacturer
Global Power Technologies Group
Brief Description
MOSFET N-CH 900V 9.5A TO3PN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GP1M009A090N PDF online browsing
Datasheet PDF Download
GP1M009A090N.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3838 pcs
Reference Price
USD 0/pcs
Our Price
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GP1M009A090N Detailed Description

Part Number GP1M009A090N
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2324pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 312W (Tc)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 4.75A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3
Weight -
Country of Origin -

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