| Part Number | MSRT20060(A)D |
|---|---|
| Part Status | Active |
| Diode Configuration | 1 Pair Series Connection |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 200A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
MSRT200100(A) | GeneSiC Semiconductor | DIODE MODULE 1KV 200A 3TOWER | Details |
|
MSRT200100(A)D | GeneSiC Semiconductor | DIODE GEN 1KV 200A 3 TOWER | Details |
|
MSRT200120(A) | GeneSiC Semiconductor | DIODE MODULE 1.2KV 200A 3TOWER | Details |
|
MSRT200120(A)D | GeneSiC Semiconductor | DIODE GEN 1.2KV 200A 3 TOWER | Details |
|
MSRT200140(A) | GeneSiC Semiconductor | DIODE MODULE 1.4KV 200A 3TOWER | Details |
|
MSRT200140(A)D | GeneSiC Semiconductor | DIODE GEN 1.4KV 200A 3 TOWER | Details |
|
MSRT200160(A) | GeneSiC Semiconductor | DIODE MODULE 1.6KV 200A 3TOWER | Details |
|
MSRT200160(A)D | GeneSiC Semiconductor | DIODE GEN 1.6KV 200A 3 TOWER | Details |
|
MSRT20060(A) | GeneSiC Semiconductor | DIODE MODULE 600V 200A 3TOWER | Details |
|
MSRT20060(A)D | GeneSiC Semiconductor | DIODE GEN PURP 600V 200A 3 TOWER | Details |
