MBRH200200R - GeneSiC Semiconductor

Part Number	MBRH200200R
Part Status	Active
Diode Type	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io)	200A
Voltage - Forward (Vf) (Max) @ If	920mV @ 200A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	1mA @ 200V
Capacitance @ Vr, F	-
Mounting Type	Chassis Mount
Package / Case	D-67
Supplier Device Package	D-67
Operating Temperature - Junction	-55°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MBRH120100	GeneSiC Semiconductor	DIODE MODULE 100V 120A D-67	Details
MBRH120100R	GeneSiC Semiconductor	DIODE MODULE 100V 120A D-67	Details
MBRH120150	GeneSiC Semiconductor	DIODE MODULE 150V 120A D-67	Details
MBRH120150R	GeneSiC Semiconductor	DIODE MODULE 150V 120A D-67	Details
MBRH12020	GeneSiC Semiconductor	DIODE MODULE 20V 120A D-67	Details
MBRH120200	GeneSiC Semiconductor	DIODE MODULE 200V 120A D-67	Details
MBRH120200R	GeneSiC Semiconductor	DIODE MODULE 200V 120A D-67	Details
MBRH12020R	GeneSiC Semiconductor	DIODE MODULE 20V 120A D-67	Details
MBRH12030	GeneSiC Semiconductor	DIODE MODULE 30V 120A D-67	Details
MBRH12030R	GeneSiC Semiconductor	DIODE MODULE 30V 120A D-67	Details