FQU13N06LTU_WS - Fairchild/ON Semiconductor

Part Number	FQU13N06LTU_WS
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs	115 mOhm @ 5.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQU13N06L	FSC	FQU13N06L FSC TO-251 New Original Stocks	Details
FQU13N06LTU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 11A IPAK	Details
FQU13N06LTU-WS	ON Semiconductor	MOSFET N-CH 60V 11A IPAK	Details
FQU13N06LTU_WS	Fairchild/ON Semiconductor	MOSFET N-CH 60V 11A IPAK	Details
FQU13N06TU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 10A IPAK	Details
FQU13N10L	FSC	FQU13N10L FSC TO-251 New Original Stocks	Details
FQU13N10LTU	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A IPAK	Details
FQU13N10TU	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A IPAK	Details