FQU10N20TU_AM002 - Fairchild/ON Semiconductor

Part Number	FQU10N20TU_AM002
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	670pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 51W (Tc)
Rds On (Max) @ Id, Vgs	360 mOhm @ 3.8A, 10V
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQU10N20CTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.8A IPAK	Details
FQU10N20LTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A IPAK	Details
FQU10N20TU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A IPAK	Details
FQU10N20TU_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A IPAK	Details