FQA16N50_F109 - Fairchild/ON Semiconductor

Part Number	FQA16N50_F109
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Rds On (Max) @ Id, Vgs	320 mOhm @ 8A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PN
Package / Case	TO-3P-3, SC-65-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQA160N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 160A TO-3P	Details
FQA16N25C	Fairchild/ON Semiconductor	MOSFET N-CH 250V 17.8A TO-3P	Details
FQA16N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 16A TO-3P	Details
FQA16N50-F109	ON Semiconductor	MOSFET N-CH 500V 16A	Details
FQA16N50_F109	Fairchild/ON Semiconductor	MOSFET N-CH 500V 16A	Details