ZXMN10B08E6TC

ZXMN10B08E6TC - Diodes Incorporated

Part Number
ZXMN10B08E6TC
Manufacturer
Diodes Incorporated
Brief Description
MOSFET N-CH 100V 1.6A SOT23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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ZXMN10B08E6TC PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3517 pcs
Reference Price
USD 0/pcs
Our Price
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ZXMN10B08E6TC Detailed Description

Part Number ZXMN10B08E6TC
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.3V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 497pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Rds On (Max) @ Id, Vgs 230 mOhm @ 1.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-26
Package / Case SOT-23-6
Weight -
Country of Origin -

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