ZVP0120AS - Diodes Incorporated

Part Number	ZVP0120AS
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	110mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Rds On (Max) @ Id, Vgs	32 Ohm @ 125mA, 10V
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
ZVP0120AS	Diodes Incorporated	MOSFET P-CH 200V 0.11A TO92-3	Details
ZVP0120ASTOA	Diodes Incorporated	MOSFET P-CH 200V 0.11A TO92-3	Details
ZVP0120ASTOB	Diodes Incorporated	MOSFET P-CH 200V 0.11A TO92-3	Details
ZVP0120ASTZ	Diodes Incorporated	MOSFET P-CH 200V 0.11A TO92-3	Details
ZVP0545A	Diodes Incorporated	MOSFET P-CH 450V 0.045A TO92-3	Details
ZVP0545ASTOA	Diodes Incorporated	MOSFET P-CH 450V 0.045A TO92-3	Details
ZVP0545ASTOB	Diodes Incorporated	MOSFET P-CH 450V 0.045A TO92-3	Details
ZVP0545ASTZ	Diodes Incorporated	MOSFET P-CH 450V 0.045A TO92-3	Details
ZVP0545GTA	Diodes Incorporated	MOSFET P-CH 450V 0.075A SOT223	Details
ZVP0545GTC	Diodes Incorporated	MOSFET P-CH 450V 0.075A SOT223	Details