DMT3006LFDF-7 - Diodes Incorporated

Part Number	DMT3006LFDF-7
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	14.1A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	3.7V, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Rds On (Max) @ Id, Vgs	7 mOhm @ 9A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type B)
Package / Case	6-UDFN Exposed Pad
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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DMT3003LFG-7	Diodes Incorporated	MOSFET NCH 30V 22A POWERDI	Details
DMT3004LFG-13	Diodes Incorporated	MOSFET NCH 30V 10.4A POWERDI	Details
DMT3004LFG-7	Diodes Incorporated	MOSFET NCH 30V 10.4A POWERDI	Details
DMT3004LPS-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI506	Details
DMT3006LDK-7	Diodes Incorporated	MOSFET N-CH 30V 17.1A VDFN30308	Details
DMT3006LFDF-13	Diodes Incorporated	MOSFET NCH 30V 14.1A UDFN2020	Details
DMT3006LFDF-7	Diodes Incorporated	MOSFET NCH 30V 14.1A UDFN2020	Details
DMT3006LFG-13	Diodes Incorporated	MOSFET NCH 30V 16A POWERDI	Details