DMN6013LFGQ-7

DMN6013LFGQ-7 - Diodes Incorporated

Part Number
DMN6013LFGQ-7
Manufacturer
Diodes Incorporated
Brief Description
MOSFET NCH 60V 10.3A POWERDI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMN6013LFGQ-7 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
72421 pcs
Reference Price
USD 0.3752/pcs
Our Price
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DMN6013LFGQ-7 Detailed Description

Part Number DMN6013LFGQ-7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 45A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2577pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 13 mOhm @ 10A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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