2DB1182Q-13 Detailed Description
Part Number |
2DB1182Q-13 |
Part Status |
Active |
Transistor Type |
PNP |
Current - Collector (Ic) (Max) |
2A |
Voltage - Collector Emitter Breakdown (Max) |
32V |
Vce Saturation (Max) @ Ib, Ic |
800mV @ 200mA, 2A |
Current - Collector Cutoff (Max) |
1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 500mA, 3V |
Power - Max |
10W |
Frequency - Transition |
110MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package |
TO-252 |
Weight |
- |
Country of Origin |
- |
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