CAS325M12HM2 Detailed Description
Part Number |
CAS325M12HM2 |
Part Status |
Active |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
444A (Tc) |
Rds On (Max) @ Id, Vgs |
4.3 mOhm @ 400A, 20V |
Vgs(th) (Max) @ Id |
4V @ 105mA |
Gate Charge (Qg) (Max) @ Vgs |
1127nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
Power - Max |
3000W |
Operating Temperature |
175°C (TJ) |
Mounting Type |
- |
Package / Case |
Module |
Supplier Device Package |
Module |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR CAS325M12HM2