C3M0280090J-TR Detailed Description
| Part Number |
C3M0280090J-TR |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
900V |
| Current - Continuous Drain (Id) @ 25°C |
11A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) |
15V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs |
9.5nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 600V |
| Vgs (Max) |
+18V, -8V |
| FET Feature |
- |
| Power Dissipation (Max) |
50W (Tc) |
| Rds On (Max) @ Id, Vgs |
360 mOhm @ 7.5A, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK-7 |
| Package / Case |
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR C3M0280090J-TR
