CDBJSC101700-G - Comchip Technology

Part Number	CDBJSC101700-G
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1700V
Current - Average Rectified (Io)	35A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	100µA @ 1700V
Capacitance @ Vr, F	1400pF @ 0V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CDBJSC101200-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Details
CDBJSC101700-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Details
CDBJSC10650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Details
CDBJSC3650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Details
CDBJSC51200-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Details
CDBJSC5650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Details
CDBJSC8650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Details